| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| -55 to 150 | |
| 20 | |
| 100 | |
| 1 | |
| 7.3@10V | |
| 7.9@4.5V|17.1@10V | |
| 17.1 | |
| 1.7 | |
| 3.3 | |
| 4.4 | |
| 1150@15V | |
| 56@15V | |
| 1.1 | |
| 134 | |
| 2500 | |
| 1 | |
| 6 | |
| 13 | |
| 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.3@10V|8.2@4.5V | |
| 2.5 | |
| 142 | |
| 60 | |
| 0.8 | |
| 2.8 | |
| 6 | |
| 1 | |
| 1.5 | |
| 3.6 | |
| 20 | |
| 14 | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 3.1(Max) mm |
| Verpackungslänge | 3.25(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
This CSD17578Q3AT power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.