| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.3 | |
| 100 | |
| 100 | |
| 1 | |
| 3.2@10V | |
| 20@4.5V|42@10V | |
| 42 | |
| 5.9 | |
| 3200@20V | |
| 3100 | |
| 3.4 | |
| 10 | |
| 20 | |
| 4.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.75 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
Looking for a component that can both amplify and switch between signals within your circuit? The CSD18501Q5A power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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