| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.2 | |
| 26 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 25@4.5V|52@10V | |
| 52 | |
| 8.4 | |
| 3900@20V | |
| 3200 | |
| 4 | |
| 6.8 | |
| 23 | |
| 5.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 6 |
| Verpackungslänge | 5 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSON-CLIP EP |
| 8 | |
| Leitungsform | No Lead |
Create an effective common drain amplifier using this CSD18502Q5B power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
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