| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.4 | |
| 100 | |
| 100 | |
| 1 | |
| 9.2@10V | |
| 28@10V | |
| 28 | |
| 5.4 | |
| 9.8 | |
| 2100@40V | |
| 188000 | |
| 2 | |
| 3 | |
| 11 | |
| 7 | |
| -55 | |
| 175 | |
| Tube | |
| 2.8 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.36(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
This CSD19503KCS power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 188000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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