| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.2 | |
| -55 to 175 | |
| 150 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 120@10V | |
| 120 | |
| 25 | |
| 37 | |
| 525 | |
| 9380@40V | |
| 42@40V | |
| 2.1 | |
| 2260 | |
| 375000 | |
| 10 | |
| 11 | |
| 30 | |
| 19 | |
| -55 | |
| 175 | |
| Tube | |
| 2.2@6V|2@10V | |
| 400 | |
| 0.9 | |
| 4 | |
| 107 | |
| 1.1 | |
| 2.5 | |
| 2.6 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.36(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, CSD19506KCS power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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