| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| -55 to 175 | |
| 100 | |
| 100 | |
| 1 | |
| 16.5@10V | |
| 17.1@10V | |
| 17.1 | |
| 3.2 | |
| 5.1 | |
| 195 | |
| 1290@50V | |
| 5.7@50V | |
| 2.4 | |
| 257 | |
| 118000 | |
| 1 | |
| 2 | |
| 9 | |
| 6 | |
| -55 | |
| 175 | |
| Tube | |
| 13.7@10V|16.3@6V | |
| 138 | |
| 0.9 | |
| 4.5 | |
| 72 | |
| 1.1 | |
| 2.8 | |
| 2.2 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15 |
| Verpackungsbreite | 4.55 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Use Texas Instruments' CSD19534KCS power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 118000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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