| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 15.1@10V | |
| 17@10V | |
| 17 | |
| 3.2 | |
| 5.1 | |
| 134 | |
| 1290@50V | |
| 5.7@50V | |
| 2.4 | |
| 257 | |
| 3200 | |
| 6 | |
| 14 | |
| 20 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 12.6@10V|14.1@6V | |
| 3.2 | |
| 137 | |
| 50 | |
| 0.8 | |
| 4.1 | |
| 53 | |
| 1 | |
| 2.8 | |
| 2.2 | |
| 20 | |
| 10 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.75 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
Create an effective common drain amplifier using this CSD19534Q5AT power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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