| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Quint Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| -6 | |
| 0.95 | |
| 5 | |
| 4000 | |
| 1 | |
| 9.9@4.5V | |
| 18.9@4.5V | |
| 4.2 | |
| 870@4V | |
| 1700 | |
| 2290 | |
| 600 | |
| 3450 | |
| 58 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) mm |
| Verpackungsbreite | 1.49(Max) mm |
| Verpackungslänge | 1.49(Max) mm |
| Leiterplatte geändert | 9 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 9 | |
| Leitungsform | Ball |
Looking for a component that can both amplify and switch between signals within your circuit? The CSD22204W power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 1700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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