| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Quint Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| -6 | |
| 0.95 | |
| 5 | |
| 4000 | |
| 1 | |
| 9.9@4.5V | |
| 18.9@4.5V | |
| 4.2 | |
| 870@4V | |
| 1700 | |
| 2290 | |
| 600 | |
| 3450 | |
| 58 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1.49(Max) |
| Verpackungslänge | 1.49(Max) |
| Leiterplatte geändert | 9 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 9 | |
| Leitungsform | Ball |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the CSD22204WT power MOSFET, developed by Texas Instruments. Its maximum power dissipation is 1700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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