| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| -6 | |
| 0.9 | |
| 2.2 | |
| 100 | |
| 1 | |
| 53@4.5V | |
| 2.9@4.5V | |
| 0.28 | |
| 394@6V | |
| 1000 | |
| 21 | |
| 4 | |
| 58 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 1 mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 4 | |
| Leitungsform | Ball |
Create an effective common drain amplifier using this CSD23202W10 power MOSFET from Texas Instruments. Its maximum power dissipation is 1000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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