| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| -6 | |
| 1.1 | |
| 3 | |
| 100 | |
| 1 | |
| 19.4@4.5V | |
| 4.9@4.5V | |
| 0.6 | |
| 703@4V | |
| 750 | |
| 27 | |
| 12 | |
| 58 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 1.5 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 6 | |
| Leitungsform | Ball |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD23203W power MOSFET can provide a solution. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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