| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Quad Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| -6 | |
| 1.05 | |
| -55 to 150 | |
| 4 | |
| 100 | |
| 1 | |
| 26@4.5V | |
| 5.8@4.5V | |
| 0.8 | |
| 1.1 | |
| 19 | |
| 778@10V | |
| 21@10V | |
| 0.45 | |
| 400 | |
| 500 | |
| 28 | |
| 12 | |
| 64 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 40@1.8V|26@2.5V|21@4.5V | |
| 38 | |
| 220(Typ) | |
| 0.75 | |
| 1.4 | |
| 26 | |
| 1 | |
| 0.75 | |
| 6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1.49(Max) |
| Verpackungslänge | 1.49(Max) |
| Leiterplatte geändert | 9 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 9 | |
| Leitungsform | Ball |
Make an effective common source amplifier using this CSD25202W15T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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