| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| -6 | |
| 1.1 | |
| 1.6 | |
| 100 | |
| 1 | |
| 47@4.5V | |
| 2.2@4.5V | |
| 0.14 | |
| 0.74 | |
| 368@10V | |
| 1000 | |
| 970 | |
| 520 | |
| 1000 | |
| 510 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.85 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 1 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 4 | |
| Leitungsform | Ball |
This CSD25213W10 power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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