| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.15 | |
| 3 | |
| 100 | |
| 1 | |
| 32.5@4.5V | |
| 3.3@4.5V | |
| 0.5 | |
| 458@10V | |
| 750 | |
| 10 | |
| 4 | |
| 24 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1(Max) |
| Verpackungslänge | 1.49(Max) |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 6 | |
| Leitungsform | Ball |
Amplify electronic signals and switch between them with the help of Texas Instruments' CSD25304W1015 power MOSFET. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
| EDA / CAD Models |
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