| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Common Source | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| -6 | |
| 1.1 | |
| 1.6 | |
| 100 | |
| 1 | |
| 68@4.5V | |
| 1.9@4.5V | |
| 0.23 | |
| 315@10V | |
| 750 | |
| 11 | |
| 5 | |
| 29 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1(Max) |
| Verpackungslänge | 1.49(Max) |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 6 | |
| Leitungsform | Ball |
This CSD75208W1015 power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 750 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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