| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Common Source | |
| NexFET | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| -6 | |
| 1.1 | |
| 1.6 | |
| 100 | |
| 1 | |
| 68@4.5V | |
| 1.9@4.5V | |
| 0.23 | |
| 315@10V | |
| 750 | |
| 11 | |
| 5 | |
| 29 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1(Max) |
| Verpackungslänge | 1.49(Max) |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 6 | |
| Leitungsform | Ball |
This CSD75208W1015T power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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