| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Source Common Drain | |
| Enhancement | |
| N | |
| 2 | |
| 12 | |
| ±10 | |
| -55 to 150 | |
| 8 | |
| 5.9@4.5V | |
| 8.4@4.5V | |
| 902@6V | |
| 2300 | |
| 589 | |
| 353 | |
| 711 | |
| 205 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.2 |
| Verpackungsbreite | 1.15(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PicoStar |
| 6 |
Create an effective common drain amplifier using this CSD83325LT power MOSFET from Texas Instruments. Its maximum power dissipation is 2300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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