| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Common Drain | |
| Enhancement | |
| N | |
| 2 | |
| ±20 | |
| 2.3 | |
| -55 to 150 | |
| 15@4.5V|31@10V | |
| 1620@15V | |
| 2500 | |
| 712 | |
| 260 | |
| 709 | |
| 164 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.2 |
| Verpackungsbreite | 1.52(Max) |
| Verpackungslänge | 3.42(Max) |
| Leiterplatte geändert | 10 |
| Lieferantenverpackung | PicoStar |
| 10 |
Create an effective common drain amplifier using this CSD87501LT power MOSFET from Texas Instruments. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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