| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| -55 to 150 | |
| 15 | |
| 15@10V | |
| 14@10V | |
| 14 | |
| 2.3 | |
| 4.6 | |
| 1080@30V | |
| 2100 | |
| 19 | |
| 15 | |
| 5 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.91 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, CSD88537NDT power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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