| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 7 | |
| -55 to 150 | |
| 1.2@0.4A@8A|1.1@0.4A@8A | |
| 0.4@0.4A@8A|0.8@3A@15A | |
| 15 | |
| 35@2A@1V|20@4A@1V | |
| 83000 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.9 mm |
| Verpackungsbreite | 4.45 mm |
| Verpackungslänge | 10.1 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN D44VH10G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 83000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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