| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±6 | |
| 1 | |
| -55 to 150 | |
| 1 | |
| 1000 | |
| 0.1 | |
| 450@4.5V | |
| 0.7366@4.5V | |
| 116.6 | |
| 93.6 | |
| 60.67@16V | |
| 5.37@16V | |
| 0.5 | |
| 9.68 | |
| 290 | |
| 12.3 | |
| 7.4 | |
| 26.7 | |
| 5.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6 | |
| 6 | |
| 0.7 | |
| 1.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.15 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-323 |
| 3 | |
| Leitungsform | Gull-wing |
This DMG1012UW-7 power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 290 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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