Diodes IncorporatedDMN1019UFDE-7MOSFETs
Trans MOSFET N-CH 12V 11A 6-Pin UDFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 0.8 | |
| 11 | |
| 2000 | |
| 1 | |
| 10@4.5V | |
| 27.3@4.5V|50.6@8V | |
| 2425@10V | |
| 2170 | |
| 16.8 | |
| 22.2 | |
| 57.6 | |
| 7.6 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.57 |
| Verpackungsbreite | 2 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | UDFN EP |
| 6 | |
| Leitungsform | No Lead |
Thanks to Diodes Zetex, both your amplification and switching needs can be taken care of with one component: the DMN1019UFDE-7 power MOSFET. Its maximum power dissipation is 2170 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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