| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 3.7 | |
| 100 | |
| 0.5 | |
| 66@10V | |
| 5.4@4.5V|10.3@10V | |
| 10.3 | |
| 502@30V | |
| 2810 | |
| 5.4 | |
| 2.4 | |
| 14.7 | |
| 2.7 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this DMN6066SSS-13 power MOSFET from Diodes Zetex. Its maximum power dissipation is 2810 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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