| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±8 | |
| 1.2 | |
| 0.2 | |
| 1000 | |
| 10 | |
| 6000@4V | |
| 0.58@4.5V | |
| 50.54@25V | |
| 425 | |
| 15 | |
| 6.63 | |
| 21.9 | |
| 4.46 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.47 mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 0.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | X1-DFN |
| 3 | |
| Leitungsform | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The DMP56D0UFB-7 power MOSFET from Diodes Zetex provides the solution. Its maximum power dissipation is 425 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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