Diodes IncorporatedDST847BDJ-7GP BJT
Trans GP BJT NPN 45V 0.1A 300mW 6-Pin SOT-963 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| 1@0.5mA@10mA|1.1@5mA@100mA | |
| 0.125@0.5mA@10mA|0.3@5mA@100mA | |
| 0.1 | |
| 100@10uA@5V|200@2mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.45(Max) |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-963 |
| 6 | |
| Leitungsform | Flat |
Add switching and amplifying capabilities to your electronic circuit with this NPN DST847BDJ-7 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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