| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 12 | |
| 10@10V | |
| 31@10V | |
| 31 | |
| 1700@10V | |
| 1600 | |
| 72 | |
| 50 | |
| 110 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.93(Max) mm |
| Verpackungsbreite | 2.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | ECH |
| 8 | |
| Leitungsform | Flat |
Make an effective common gate amplifier using this ECH8410-TL-H power MOSFET from ON Semiconductor. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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