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Diodes IncorporatedFCX491ATAGP BJT
Trans GP BJT NPN 40V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 40 | |
| 7 | |
| 1.1@100mA@1A | |
| 0.3@50mA@500mA|0.5@100mA@1A | |
| 1 | |
| 100 | |
| 300@1mA@5V|300@500mA@5V|200@1A@5V|35@2A@5V | |
| 1000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN FCX491ATA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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