Diodes IncorporatedFCX658ATAGP BJT
Trans GP BJT NPN 400V 0.5A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 400 | |
| 400 | |
| 5 | |
| 0.85@10mA@100mA | |
| 0.165@1mA@20mA|0.125@5mA@50mA|0.2@10mA@100mA | |
| 0.5 | |
| 100 | |
| 85@1mA@5V|100@10mA@10V|55@100mA@5V|35@200mA@10V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Jump-start your electronic circuit design with this versatile NPN FCX658ATA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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