| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 450 | |
| ±30 | |
| 4.5 | |
| 0.7 | |
| 10000 | |
| 100 | |
| 12100@10V | |
| 3.7@10V | |
| 3.7 | |
| 55@20V | |
| 2000 | |
| 46 | |
| 10 | |
| 15 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Use ON Semiconductor's FW276-TL-2H power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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