GeneSiC SemiconductorGB01SLT06-214Gleichrichter
Diode Schottky SiC 650V 1A 2-Pin DO-214 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Schottky Diode | |
| SiC | |
| Single | |
| 650 | |
| 1 | |
| 8 | |
| 1.8 | |
| 5 | |
| 45(Typ) | |
| 14000 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.24(Max) |
| Verpackungsbreite | 3.94(Max) |
| Verpackungslänge | 4.57(Max) |
| Leiterplatte geändert | 2 |
| Standard-Verpackungsname | DO |
| Lieferantenverpackung | DO-214 |
| 2 | |
| Leitungsform | J-Lead |
Switch from an AC voltage to a DC voltage using a Schottky diode GB01SLT06-214 rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 64000 mW. Its peak non-repetitive surge current is 10 A, while its maximum continuous forward current is 2.5 A. It is made in a single configuration. This rectifier has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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