Analog DevicesHMC1126-SXHF-Verstärker
RF Amp Single Power Amp 50GHz 8.5V 5-Pin Die Tray
HMC1126: GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz
The HMC1126ACEZ-R7 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 0.4 GHz to 52 GHz.
The HMC1126ACEZ-R7 amplifier inputs/outputs are internally matched to 50Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31mm (12 mils).
Key Features and Benefits:
- • Wideband up to 52 GHz
- • 12 dB gain
- • 3.5 dB noise figure
- • 28.5 dBm output IP3, 10 dB higher than a typical amplifier
Applications:
- • Aerospace and Defense: electronic warfare
- • Instrumentation: test equipment
- • Communications: 5G
- • General Purpose
The HMC1126ACEZ-R7 can be evaluated with the HMC1126-EVALZ
Block Diagrams and Tables:
| Compliant | |
| 3A001b.2.d. | |
| Active | |
| 8542.33.00.01 | |
| Automotive | No |
| PPAP | No |
| Power Amplifier | |
| 1 | |
| 50000 | |
| 10.5@50000MHz | |
| 13@50000MHz | |
| 24@50000MHz | |
| 12(Typ)@50000MHz | |
| 12(Typ)@50000MHz | |
| 5@50000MHz | |
| 8.5 | |
| 65(Typ)@5V | |
| Single | |
| 1915 | |
| -55 | |
| 85 | |
| Tray | |
| Verpackungshöhe | 0.05 mm |
| Verpackungsbreite | 1.45 mm |
| Verpackungslänge | 2.3 mm |
| Leiterplatte geändert | 5 |
| Lieferantenverpackung | Die |
| 5 |
| EDA / CAD Models |
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