Infineon Technologies AGIKP40N65H5XKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Trench Stop 5 | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.65 | |
| 74 | |
| 0.1 | |
| 250 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
This IKP40N65H5XKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. Its maximum power dissipation is 255000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |
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