10-25% Rabatt
Infineon Technologies AGIKW50N65H5FKSA1IGBT-Chip
Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.65 | |
| 80 | |
| 0.1 | |
| 305 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) mm |
| Verpackungsbreite | 5.21(Max) mm |
| Verpackungslänge | 16.3(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This IKW50N65H5FKSA1 IGBT transistor from Infineon Technologies is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 305000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
| EDA / CAD Models |
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