onsemiIMD10AMT1GDigital-BJT
Trans Digital BJT NPN/PNP 50V 0.5A 285mW 6-Pin SC-74R T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.5 | |
| 100@1mA@5V@NPN|68@100mA@5V@PNP | |
| 13(Max)@NPN|0.13(Max)@PNP | |
| 0.012(Max)@PNP | |
| 0.3@1mA@100mA | |
| 285 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.5 mm |
| Verpackungslänge | 3 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-74R |
| 6 |
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor's npn and PNP IMD10AMT1G digital transistor. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 100@1mA@5 V@NPN|68@100mA@5V@PNP. It has a maximum collector emitter saturation voltage of 0.3@1mA@100mA V. Its maximum power dissipation is 285 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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