Infineon Technologies AGIPA075N15N3GXKSA1MOSFETs
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541290095 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| 43 | |
| 7.5@10V | |
| 70@10V | |
| 70 | |
| 5470@75V | |
| 39000 | |
| 15 | |
| 25 | |
| 50 | |
| 22 | |
| -55 | |
| 175 | |
| Tube | |
| 5.9@10V|6.2@8V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPA075N15N3GXKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 39000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.

