Infineon Technologies AGIPA086N10N3GXKSA1MOSFETs
Trans MOSFET N-CH 100V 45A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 45 | |
| 8.6@10V | |
| 42@10V | |
| 42 | |
| 2990@50V | |
| 37500 | |
| 8 | |
| 10 | |
| 27 | |
| 16 | |
| -55 | |
| 175 | |
| Tube | |
| 7.5@10V|9.2@6V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the IPA086N10N3GXKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 37500 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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