Infineon Technologies AGIPA105N15N3GXKSA1MOSFETs
Trans MOSFET N-CH 150V 37A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| 37 | |
| 10.5@10V | |
| 41@10V | |
| 41 | |
| 3230@75V | |
| 40500 | |
| 9 | |
| 20 | |
| 35 | |
| 17 | |
| -55 | |
| 175 | |
| Tube | |
| 9.1@10V|9.5@8V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPA105N15N3GXKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 40500 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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