Infineon Technologies AGIPA60R099C6XKSA1MOSFETs
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| IPA60R099C6XKSA1 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 37.9 | |
| 99@10V | |
| 119@10V | |
| 119 | |
| 2660@100V | |
| 35000 | |
| 6 | |
| 12 | |
| 75 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 |
| Verpackungsbreite | 4.7 |
| Verpackungslänge | 10.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this IPA60R099C6XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 35000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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