Infineon Technologies AGIPA60R190P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 20.2 | |
| 100 | |
| 1 | |
| 190@10V | |
| 37@10V | |
| 37 | |
| 1750@100V | |
| 34000 | |
| 7 | |
| 8 | |
| 45 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| 171@10V | |
| 57 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
This IPA60R190P6XKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 34000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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