Infineon Technologies AGIPA60R600P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 4.9A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 4.9 | |
| 100 | |
| 1 | |
| 600@10V | |
| 12@10V | |
| 12 | |
| 557@100V | |
| 28000 | |
| 14 | |
| 7 | |
| 33 | |
| 11 | |
| -55 | |
| 150 | |
| Tube | |
| 540@10V | |
| 18 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
This IPA60R600P6XKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 28000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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