Infineon Technologies AGIPA60R950C6XKSA1MOSFETs
Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 4.4 | |
| 100 | |
| 1 | |
| 950@10V | |
| 13@10V | |
| 13 | |
| 280@100V | |
| 26000 | |
| 13 | |
| 8 | |
| 60 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| 860@10V | |
| 12 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IPA60R950C6XKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 26000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos c6 technology.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.