Infineon Technologies AGIPA65R045C7XKSA1MOSFETs
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 18 | |
| 100 | |
| 2 | |
| 45@10V | |
| 93@10V | |
| 93 | |
| 4340@400V | |
| 35000 | |
| 7 | |
| 14 | |
| 82 | |
| 20 | |
| -55 | |
| 150 | |
| Tube | |
| 40@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.99 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Use Infineon Technologies' IPA65R045C7XKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 35000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos c7 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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