Infineon Technologies AGIPA65R099C6XKSA1MOSFETs
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 38 | |
| 99@10V | |
| 127@10V | |
| 127 | |
| 2780@100V | |
| 35000 | |
| 6 | |
| 9 | |
| 77 | |
| 10.6 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPA65R099C6XKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 35000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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