Infineon Technologies AGIPA65R190C7XKSA1MOSFETs
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 8 | |
| 100 | |
| 1 | |
| 190@10V | |
| 23@10V | |
| 23 | |
| 1150@400V | |
| 30000 | |
| 9 | |
| 11 | |
| 54 | |
| 11 | |
| -55 | |
| 150 | |
| Tube | |
| 168@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.99 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common gate amplifier using this IPA65R190C7XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 30000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos c7 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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