Infineon Technologies AGIPB026N06NATMA1MOSFETs
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.8(Typ) | |
| 100 | |
| 100 | |
| 1 | |
| 2.6@10V | |
| 56@10V | |
| 56 | |
| 4100@30V | |
| 3000 | |
| 8 | |
| 15 | |
| 30 | |
| 17 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.3@10V|3@6V | |
| 400 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Use Infineon Technologies' IPB026N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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