Infineon Technologies AGIPB031N08N5ATMA1MOSFETs
Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.8 | |
| 120 | |
| 100 | |
| 1 | |
| 3.1@10V | |
| 69@10V | |
| 69 | |
| 4800@40V | |
| 167000 | |
| 12 | |
| 18 | |
| 37 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.7@10V|3.6@6V | |
| 480 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPB031N08N5ATMA1 power MOSFET from Infineon Technologies provides the solution. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This Wirewound channel MOSFET transistor operates in power mode. This MOSFET transistor has an operating temperature range of -55 °C to 125 °C.
| EDA / CAD Models |
UAV-Bedrohungen wirksam abwehren
So entsteht ein integriertes Counter-UAV-Abwehrsystem mit Intelligent Processing, Sensorik und Rapid Response.