Infineon Technologies AGIPB038N12N3GATMA1MOSFETs
Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 120 | |
| 3.8@10V | |
| 158@10V | |
| 158 | |
| 10400@60V | |
| 300000 | |
| 21 | |
| 52 | |
| 70 | |
| 35 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 3.2@10V|3.5@10V | |
| 480 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB038N12N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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