Infineon Technologies AGIPB054N06N3GATMA1MOSFETs
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 80 | |
| 5.4@10V | |
| 61@10V | |
| 61 | |
| 5000@30V | |
| 115000 | |
| 9 | |
| 68 | |
| 32 | |
| 24 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 4.4@10V|4.7@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPB054N06N3GATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 115000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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