10-25% Rabatt
Infineon Technologies AGIPB057N06NATMA1MOSFETs
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.8(Typ) | |
| 45 | |
| 100 | |
| 1 | |
| 5.7@10V | |
| 27@10V | |
| 27 | |
| 2000@30V | |
| 3000 | |
| 7 | |
| 12 | |
| 20 | |
| 12 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 4.9@10V|6.4@6V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The IPB057N06NATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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