Infineon Technologies AGIPB083N10N3GATMA1MOSFETs
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 80 | |
| 100 | |
| 1 | |
| 8.3@10V | |
| 42@10V | |
| 42 | |
| 2990@50V | |
| 125000 | |
| 8 | |
| 42 | |
| 31 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Make an effective common gate amplifier using this IPB083N10N3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos 3 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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